Analytic model for the electrical properties of negative capacitance metal-ferroelectric insulator silicon (MFIS) capacitor. Issue 185 (22nd November 2017)

• Record Type: Journal Article
• Authors: Rasool, Raheela; Rather, G. M.; ud-Din, Najeeb
• Is Part Of: Integrated ferroelectrics. Issue 185(2017)
• Page Start: 93
• Page End: 101
• Publication Date: 2017-11-22
• Subjects: Modelling -- MFIS -- ferroelectrics -- negative capacitance; Ferroelectric devices -- Periodicals; Integrated circuits -- Periodicals; 537.244805
• DOI: 10.1080/10584587.2017.1370345
• Languages: English
• ISSNs: 1058-4587

Abstract

ABSTRACT: In this paper, we present an analytical model for the voltages across the Metal-Ferroelectric-Insulator-Silicon(MFIS) capacitor and show how the surface potential is amplified due to the negative capacitance property of ferroelectric materials. Our model is based on the Landau-Khalatnikov equation coupled with the charge based MOS capacitor model. It is also used to analyse the effect on the total capacitance of the MFIS capacitor. Furthermore, we analyse the impact of ferroelectric and gate oxide thicknesses on the amplified surface potential and also on the threshold voltage of the capacitor.