Contacts to solution-synthesized SnS nanoribbons: dependence of barrier height on metal work function. Issue 1 (7th December 2017)

• Record Type: Journal Article
• Authors: Hajzus, Jenifer R.; Biacchi, Adam J.; Le, Son T.; Richter, Curt A.; Hight Walker, Angela R.; Porter, Lisa M.
• Is Part Of: Nanoscale. Volume 10:Issue 1(2018)
• Page Start: 319
• Page End: 327
• Publication Date: 2017-12-07
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c7nr07403d
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : Four different metals were patterned onto individual, solution-synthesized SnS nanoribbons to determine Schottky barrier heights and specific contact resistances. Abstract : Tin(ii ) monosulfide (SnS) is a layered, anisotropic material that is of interest as a two-dimensional semiconductor for opto-electronic, thermoelectric, and piezoelectric applications. In this study, the effect of work function on contact behavior was investigated. Ni/Au, Pd/Au, Cr/Au, and Ti/Au contacts were fabricated onto individual, solution-synthesized, p-type SnS nanoribbons. The lower work function metals (Cr and Ti) formed Schottky contacts, whereas the higher work function metals (Ni and Pd) formed ohmic or semi-ohmic contacts. Of the ohmic contacts, Ni was found to have a lower contact resistance (∼10 −4 Ω cm 2 or lower) than Pd (∼10 −3 Ω cm 2 or lower). Both the calculated Schottky barriers (0.39 and 0.50 eV) for Cr and Ti, respectively, and the ohmic behavior for Ni and Pd agree with behavior predicted by Schottky–Mott theory. The results indicate that high work function metals should be considered to form low resistance contacts to SnS multilayers.