20–25 Gbit/s low-power inductor-less single-chip optical receiver and transmitter frontend in 28 nm digital CMOS. Issue 8 (2nd May 2017)
- Record Type:
- Journal Article
- Title:
- 20–25 Gbit/s low-power inductor-less single-chip optical receiver and transmitter frontend in 28 nm digital CMOS. Issue 8 (2nd May 2017)
- Main Title:
- 20–25 Gbit/s low-power inductor-less single-chip optical receiver and transmitter frontend in 28 nm digital CMOS
- Authors:
- Szilágyi, László
Belfiore, Guido
Henker, Ronny
Ellinger, Frank - Editors:
- Madjar, Asher
Rosen, Arye - Abstract:
- Abstract : The design of an analog frontend including a receiver amplifier (RX) and laser diode driver (LDD) for optical communication system is described. The RX consists of a transimpedance amplifier, a limiting amplifier, and an output buffer (BUF). An offset compensation and common-mode control circuit is designed using switched-capacitor technique to save chip area, provides continuous reduction of the offset in the RX. Active-peaking methods are used to enhance the bandwidth and gain. The very low gate-oxide breakdown voltage of transistors in deep sub-micron technologies is overcome in the LDD by implementing a topology which has the amplifier placed in a floating well. It comprises a level shifter, a pre-amplifier, and the driver stage. The single-chip frontend, fabricated in a 28 nm bulk-digital complementary metal–oxide–semiconductor (CMOS) process has a total active area of 0.003 mm 2, is among the smallest optical frontends. Without the BUF, which consumes 8 mW from a separate supply, the RX power consumption is 21 mW, while the LDD consumes 32 mW. Small-signal gain and bandwidth are measured. A photo diode and laser diode are bonded to the chip on a test-printed circuit board. Electro-optical measurements show an error-free detection with a bit error rate of 10 −12 at 20 Gbit/s of the RX at and a 25 Gbit/s transmission of the LDD.
- Is Part Of:
- International journal of microwave and wireless technologies. Volume 9:Issue 8(2017)
- Journal:
- International journal of microwave and wireless technologies
- Issue:
- Volume 9:Issue 8(2017)
- Issue Display:
- Volume 9, Issue 8 (2017)
- Year:
- 2017
- Volume:
- 9
- Issue:
- 8
- Issue Sort Value:
- 2017-0009-0008-0000
- Page Start:
- 1667
- Page End:
- 1677
- Publication Date:
- 2017-05-02
- Subjects:
- RF front-ends, -- Active circuits, -- Broadband amplifiers
Wireless communication systems -- Periodicals
Microwave circuits -- Periodicals
Radio frequency -- Periodicals
621.381305 - Journal URLs:
- http://journals.cambridge.org/action/displayJournal?jid=MRF ↗
http://www.eumwa.org/en/publications/international-journal/journal.html ↗ - DOI:
- 10.1017/S1759078717000472 ↗
- Languages:
- English
- ISSNs:
- 1759-0787
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library HMNTS - ELD Digital store
- Ingest File:
- 5502.xml