Cite
HARVARD Citation
Wang, W. et al. (2017). Control of interfacial reactions for the growth of high-quality AlN epitaxial films on Cu(111) substrates. CrystEngComm. 19 (48), pp. 7307-7315. [Online].
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Wang, W. et al. (2017). Control of interfacial reactions for the growth of high-quality AlN epitaxial films on Cu(111) substrates. CrystEngComm. 19 (48), pp. 7307-7315. [Online].