Pressure tolerant nanocrystalline Se85-xTe15Gax(x=0, 2, 6, 10, 15) semiconductor. (2016)

• Record Type: Journal Article
• Authors: Chaudhary, Neeru; Prasad, K.N.N.; Goyal, Navdeep
• Is Part Of: Materials today. Volume 3:Number 6(2016)
• Page Start: 2347
• Page End: 2351
• Publication Date: 2016
• Subjects: High Pressure -- Resistivity change -- Coordination number -- Semiconductors; Materials science -- Congresses -- Periodicals; 620.1
• DOI: 10.1016/j.matpr.2016.04.146
• Languages: English
• ISSNs: 2214-7853

Abstract

Abstract: The synthesis of Se85-x Te15 Gax (x=0, 2, 6, 10, 15) nanocrystalline material and its resistance change under pressure is reported in this paper. The Se85-x Te15 Gax (x=0, 2, 6, 10, 15) nanocrystalline material has been synthesized through melt and quench technique. Resistance change was studied under pressure (0-10 GPa) in Bridgman opposed anvil cell. The variations in resistance at different pressures were recorded. The relative resistance change is very small in the experimental range. This has given its application as a strong contender for fabricating solid state devices in Pressure Tolerant Electronics.