Cite
HARVARD Citation
Cui, P. et al. (2016). Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors. Superlattices and microstructures. pp. 358-364. [Online].
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Cui, P. et al. (2016). Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors. Superlattices and microstructures. pp. 358-364. [Online].