Controlling Defect and Dopant Concentrations in Graphene by Remote Plasma Treatments. Issue 11 (25th September 2017)

• Record Type: Journal Article
• Authors: McManus, John B.; Hennessy, Alison; Cullen, Conor P.; Hallam, Toby; McEvoy, Niall; Duesberg, Georg S.
• Is Part Of: Physica status solidi. Volume 254:Issue 11(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-09-25
• Subjects: chemical vapour deposition -- doping -- graphene -- nitrogen -- plasma treatment -- transistors; Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201700214
• Languages: English
• ISSNs: 0370-1972

Abstract

Abstract : This report details the controllable doping of graphene through post‐growth plasma treatments. Defects are controllably introduced into the lattice using argon plasma, following this sample are exposed to ammonia/hydrogen plasma. During this nitrogen atoms get incorporated causing partial restoration of the graphene lattice. The damage levels are characterised by Raman and X‐ray photoelectron spectroscopies. The incorporation of nitrogen into the graphene lattice provides significant n‐doping. This is confirmed by the fabrication of graphene field‐effect transistors which show clear n‐type behaviour and mobilities not significantly less than those of pristine graphene. Thus this work demonstrates the viability of plasma treatments to reliably dope graphene. Abstract : McManus et al. demonstrate the n‐doping of graphene using post‐growth plasma treatments. Defects are controllably introduced with argon plasma before the sample is subsequently exposed to ammonia/hydrogen plasma. This combined approach serves to introduce nitrogen atoms throughout the graphene lattice. The doping effects are explored through spectroscopy and electrical characterisation.