Development and vapour pressure of metallo-organic precursors of copper for the deposition of copper thin films by a plasma-assisted MOCVD. Issue 12 (2nd December 2017)

• Record Type: Journal Article
• Authors: Johnson, M. G.; Raj Bharath, S.; Arockiasamy, S.; Maiyalagan, T.; Selvakumar, J.; Nagaraja, K. S.
• Is Part Of: Inorganic and nano-metal chemistry. Volume 47:Issue 12(2017)
• Page Start: 1635
• Page End: 1642
• Publication Date: 2017-12-02
• Subjects: Copper precursors -- vapour pressure -- copper coating by MOCVD; Inorganic compounds -- Synthesis -- Periodicals; Nanostructured materials -- Periodicals; Reactivity (Chemistry) -- Periodicals; Inorganic compounds -- Synthesis; Nanostructured materials; Reactivity (Chemistry); Periodicals; 546
• DOI: 10.1080/24701556.2017.1357591
• Languages: English
• ISSNs: 2470-1556

Abstract

ABSTRACT: A group of metallo-organic complexes of copper, namely bis(N-R-salicylaldiminato)Cu(II) (R: methyl to n-pentyl, hereafter referred to as1 –5 ) were prepared and their volatile nature was confirmed by TG/DTA. The molecular masses (M) of1 –5 were confirmed by mass spectrometry. The vapour pressure ( pe ) for precursors1 –5 determined by a transpiration technique using the Clausius–Clapeyron relation yielded the values of 91 ± 2, 84 ± 4, 100 ± 2, 92 ± 2, and 72 ± 2 kJ mol −1 for ΔH o vap, respectively, for1 –5 . The thin films deposited by plasma-assisted MOCVD technique contain predominantly metallic copper in <111> orientation. The SEM images of the thin films exhibit continuous nanoball-like structure.