Sensitized monolayer MoS2 phototransistors with ultrahigh responsivity. Issue 44 (1st November 2017)

• Record Type: Journal Article
• Authors: Yang, Yujue; Huo, Nengjie; Li, Jingbo
• Is Part Of: Journal of materials chemistry. Volume 5:Issue 44(2017)
• Page Start: 11614
• Page End: 11619
• Publication Date: 2017-11-01
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c7tc03476h
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : Our proposed sensitized monolayer MoS2 phototransistor exhibits a very high responsivity of ∼10 6 A W −1 enabling high sensitivity of ∼10 13 Jones. Abstract : Monolayer MoS2 photodetectors have been extensively investigated; however, their responsivity and sensitivity are highly limited due to the monolayer thin profile. Herein, we proposed a sensitized-MoS2 photodetector consisting of a monolayer MoS2 transport channel sensitizing with few-layer MoS2 on top; this photodetector exhibited a very high responsivity of ∼10 4 A W −1 (at negative V g ) and ∼10 5 –10 6 A W −1 (at zero and positive V g ) due to improved photon absorption and enhanced mobility, more than one order of magnitude higher than that of the pure monolayer MoS2 . Moreover, the sensitivity D * as high as ∼10 13 Jones was achieved by operating our sensitized device in the depletion mode, where there was very low noise. This device design and the simple approach proposed herein can open up new ways towards high-performance 2D material-based photodetectors.