Effective Schottky barrier lowering of Ni silicide/p-Si(100) using an ytterbium confinement structure for high performance n-type MOSFETs. (15th January 2017)

• Record Type: Journal Article
• Authors: Shen, Keng-Hui; Chen, Szu-Hung; Liu, Wei-Ting; Wu, Bao-Hsien; Chen, Lih-Juann
• Is Part Of: Materials & design. Volume 114(2017)
• Page Start: 220
• Page End: 225
• Publication Date: 2017-01-15
• Subjects: Schottky barrier -- nMOSFET -- NiSi -- Yb confinement; Materials -- Periodicals; Engineering design -- Periodicals; Matériaux -- Périodiques; Conception technique -- Périodiques; Electronic journals; 620.11
• DOI: 10.1016/j.matdes.2016.11.084
• Languages: English
• ISSNs: 0264-1275

Abstract

Abstract: A simple but effective rare earth metal (RE) confinement structure is demonstrated to suppress surface accumulation of Yb generally encountered in the RE metal incorporated Ni silicide system. The confinement structure is realized by inserting a Ti diffusion barrier layer between Yb and Ni layers. Yb atoms can be constrained in a specified reaction region during silicidation as evidenced by Auger electron spectroscopy and cross-section transmission electron microscopy analysis. The RE metal confinement structure provides a complementary metal-oxide-semiconductor compatible approach for further Schottky barrier height engineering and is a promising method for future technology nodes. Graphical abstract: Highlights: The insertion of Ti layer effectively suppresses Yb out-diffusion and prevents the Yb from oxidation during silicidation. Yb atoms are confined by the inserted Ti layer and react with both Ni and Si to form Yb-Ni silicide. The confinement leads the SBH of the system to a 0.02 and 0.025 eV lowering at 500 and 600 °C, respectively. The RE metal confinement structure provides a CMOS compatible approach for further SBH engineering and technology nodes.