Effects of Defects on the Temperature‐Dependent Thermal Conductivity of Suspended Monolayer Molybdenum Disulfide Grown by Chemical Vapor Deposition. (23rd October 2017)
- Record Type:
- Journal Article
- Title:
- Effects of Defects on the Temperature‐Dependent Thermal Conductivity of Suspended Monolayer Molybdenum Disulfide Grown by Chemical Vapor Deposition. (23rd October 2017)
- Main Title:
- Effects of Defects on the Temperature‐Dependent Thermal Conductivity of Suspended Monolayer Molybdenum Disulfide Grown by Chemical Vapor Deposition
- Authors:
- Yarali, Milad
Wu, Xufei
Gupta, Tushar
Ghoshal, Debjit
Xie, Lixin
Zhu, Zhuan
Brahmi, Hatem
Bao, Jiming
Chen, Shuo
Luo, Tengfei
Koratkar, Nikhil
Mavrokefalos, Anastassios - Abstract:
- Abstract: It is understood that defects of the atomic arrangement of the lattice in 2D molybdenum disulfide (MoS2 ) grown by chemical vapor deposition (CVD) can have a profound effect on the electronic and optical properties. Beyond these it is a major prerequisite to also understand the fundamental effect of such defects on phonon transport, to guarantee the successful integration of MoS2 into the solid‐state devices. A comprehensive joint experiment‐theory investigation to explore the effect of lattice defects on the thermal transport of the suspended MoS2 monolayer grown by CVD is presented. The measured room temperature thermal conductivity values are 30 ± 3.3 and 35.5 ± 3 W m −1 K −1 for two samples, which are more than two times smaller than that of their exfoliated counterpart. High‐resolution transmission electron microscopy shows that these CVD‐grown samples are polycrystalline in nature with low angle grain boundaries, which is primarily responsible for their reduced thermal conductivity. Higher degree of polycrystallinity and aging effects also result in smoother temperature dependency of thermal conductivity (κ) at temperatures below 100 K. First‐principles lattice dynamics simulations are carried out to understand the role of defects such as isotopes, vacancies, and grain boundaries on the phonon scattering rates of our CVD‐grown samples. Abstract : The lattice structure–thermal conductivity relation of MoS2 monolayer grown by chemical vapor deposition isAbstract: It is understood that defects of the atomic arrangement of the lattice in 2D molybdenum disulfide (MoS2 ) grown by chemical vapor deposition (CVD) can have a profound effect on the electronic and optical properties. Beyond these it is a major prerequisite to also understand the fundamental effect of such defects on phonon transport, to guarantee the successful integration of MoS2 into the solid‐state devices. A comprehensive joint experiment‐theory investigation to explore the effect of lattice defects on the thermal transport of the suspended MoS2 monolayer grown by CVD is presented. The measured room temperature thermal conductivity values are 30 ± 3.3 and 35.5 ± 3 W m −1 K −1 for two samples, which are more than two times smaller than that of their exfoliated counterpart. High‐resolution transmission electron microscopy shows that these CVD‐grown samples are polycrystalline in nature with low angle grain boundaries, which is primarily responsible for their reduced thermal conductivity. Higher degree of polycrystallinity and aging effects also result in smoother temperature dependency of thermal conductivity (κ) at temperatures below 100 K. First‐principles lattice dynamics simulations are carried out to understand the role of defects such as isotopes, vacancies, and grain boundaries on the phonon scattering rates of our CVD‐grown samples. Abstract : The lattice structure–thermal conductivity relation of MoS2 monolayer grown by chemical vapor deposition is investigated in a wide temperature range using a suspended microdevice with integrated resistance thermometers. Higher degree of polycrystallinity leads to smoother temperature dependency at temperatures below 100 K. The observations are explained by the first‐principles lattice dynamics calculations. … (more)
- Is Part Of:
- Advanced functional materials. Volume 27:Number 46(2017)
- Journal:
- Advanced functional materials
- Issue:
- Volume 27:Number 46(2017)
- Issue Display:
- Volume 27, Issue 46 (2017)
- Year:
- 2017
- Volume:
- 27
- Issue:
- 46
- Issue Sort Value:
- 2017-0027-0046-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2017-10-23
- Subjects:
- chemical vapor deposition -- defect engineering -- molybdenum disulfide -- thermal conductivity -- transition metal dichalcogenides
Materials -- Periodicals
Chemical vapor deposition -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1616-3028 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/adfm.201704357 ↗
- Languages:
- English
- ISSNs:
- 1616-301X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.853900
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 5430.xml