Cite
HARVARD Citation
Shrestha, N. et al. (2015). A novel AlGaN/GaN multiple aperture vertical high electron mobility transistor with silicon oxide current blocking layer. Vacuum. pp. 59-63. [Online].
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Shrestha, N. et al. (2015). A novel AlGaN/GaN multiple aperture vertical high electron mobility transistor with silicon oxide current blocking layer. Vacuum. pp. 59-63. [Online].