Investigation of light induced charge transport properties in Dy2NiMnO6 perovskite based Schottky diode. (3rd October 2017)

• Record Type: Journal Article
• Authors: Sheikh, Md. Sariful; Chanda, Sadhan; Dey, Arka; Dutta, Alo; Ray, Partha Pratim; Sinha, T. P.
• Is Part Of: Ferroelectrics. Volume 518(2017)
• Page Start: 204
• Page End: 211
• Publication Date: 2017-10-03
• Subjects: Sol-gel synthesis -- perovskite -- Schottky diode -- ideality factor -- barrier potential height; Ferroelectricity -- Periodicals; Ferroelectric crystals -- Periodicals; 537
• DOI: 10.1080/00150193.2017.1360677
• Languages: English
• ISSNs: 0015-0193

Abstract

ABSTRACT: Here, we have discussed the charge transport phenomena through the interface formed by silver and double perovskite oxide Dy2 NiMnO6 (DNMO). The charge carrier transport mechanism in Ag/DNMO junction under dark and illuminated conditions was analyzed on the basis of the thermionic emission theory of metal-semiconductor junction. The Schottky diode parameters like ideality factor, barrier potential height and series resistance of the freshly fabricated device were evaluated under dark and illuminated conditions. The results show significant improvements in the rectification ratio, barrier potential height and ideality factor of the device upon light illumination.