Effect of quantum confinement on photosensitivity in ZnS thin film grown by facile chemical bath deposition. (26th October 2017)

• Record Type: Journal Article
• Authors: Huse, Nanasaheb P.; Dive, Avinash S.; Upadhye, Deepak S.; Bagul, Sagar B.; Gattu, Ketan P.; Sharma, Ramphal
• Is Part Of: Ferroelectrics. Volume 519(2017)
• Page Start: 170
• Page End: 177
• Publication Date: 2017-10-26
• Subjects: ZnS thin film -- quantum dots -- excitonic peak -- photosensitivity; Ferroelectricity -- Periodicals; Ferroelectric crystals -- Periodicals; 537
• DOI: 10.1080/00150193.2017.1361253
• Languages: English
• ISSNs: 0015-0193

Abstract

ABSTRACT: Nanostructured ZnS thin film has been successfully synthesized by CBD method. Face-centered cubic structure with average crystallite size of 3.4 nm suggests the formation of quantum dots, confirmed by XRD. The ZnS thin film represents higher absorption in UV region with an energy band gap of 3.77 eV, slightly shifted at higher scale due to quantum size effect. The I-V curve in dark and under light illumination (200 watts) shows a decrease in resistivity from 1.16 MΩ-cm to 0.77 MΩ-cm resulted in 34% photosensitivity. The calculated photosensor efficiency and photoresponsivity were 1.51% and 11.8 nA/W 2 respectively.