HWCVD of B-doped silicon carbide thin films for SHJ solar cell technology. Issue 184 (13th October 2017)

• Record Type: Journal Article
• Authors: Huran, Jozef; Mikolášek, Miroslav; Perný, Milan; Šály, Vladimir; Kleinová, Angela; Sasinková, Vlasta; Kobzev, Alexander P.; Arbet, Juraj
• Is Part Of: Integrated ferroelectrics. Issue 184(2017)
• Page Start: 23
• Page End: 31
• Publication Date: 2017-10-13
• Subjects: SiC thin film -- HWCVD -- structural properties -- SHJ solar cell; Ferroelectric devices -- Periodicals; Integrated circuits -- Periodicals; 537.244805
• DOI: 10.1080/10584587.2017.1368636
• Languages: English
• ISSNs: 1058-4587

Abstract

ABSTRACT: Boron-doped SiC thin films were deposited on N-type Si(100) substrates at various deposition conditions by means of HWCVD technology using silane (SiH4 ), methane (CH4 ), hydrogen(H2 ), diborane (B2 H6, 5vol.% in H2 ) and argon (Ar) gas as precursors. Elements concentration was determined by RBS and ERD method. Chemical compositions were analyzed by FTIR and Raman spectroscopy. Solar cell structure with top grid Al electrode was prepared to investigate the photovoltaic response and to gain insight about the quality of films and their suitability for photovoltaic applications. Comparison of open-circuit voltage ( V OC ), short-circuit current ( I sc ), fill factor (FF) and efficiency (Ef ) was discussed.