Stability of Optically Injected Two‐State Quantum‐Dot Lasers. Issue 12 (28th August 2017)

• Record Type: Journal Article
• Authors: Meinecke, Stefan; Lingnau, Benjamin; Röhm, André; Lüdge, Kathy
• Is Part Of: Annalen der Physik. Volume 529:Issue 12(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-08-28
• Subjects: Quantum Dot Lasers -- Two‐State Lasing -- Optical Injection -- Optical Bistability -- All‐Optical Switching; Physics -- Periodicals; Chemistry -- Periodicals; 530.05
• DOI: 10.1002/andp.201600279
• Languages: English
• ISSNs: 0003-3804

Abstract

Abstract: Simultaneous two‐state lasing is a unique property of semiconductor quantum‐dot (QD) lasers. This not only changes steady‐state characteristics of the laser device but also its dynamic response to perturbations. In this paper we investigate the dynamic stability of QD lasers in an external optical injection setup. Compared to conventional single‐state laser devices, we find a strong suppression of dynamical instabilities in two‐state lasers. Furthermore, depending on the frequency and intensity of the injected light, pronounced areas of bistability between both lasing frequencies appear, which can be employed for fast optical switching in all‐optical photonic computing applications. These results emphasize the suitability of QD semiconductor lasers in future integrated optoelectronic systems where a high level of stability is required. Abstract : Semiconductor lasers with quantum‐dots as active material are able to simultaneously lase at two wavelength. They can be exploited for all‐optical switching applications, if implemented in an optical injection setup. The authors analyse the stability properties and discuss the parameter dependence of the bi‐stability regions between ground‐state (GS) and excited‐state (ES) emission. Interestingly, a large tolerance to optical perturbations is found for these two‐state lasers.