Fabrication of In2O3/ZnO hetero-epitaxial-junctions with enhanced PEC performances. (December 2017)

• Record Type: Journal Article
• Authors: Zhang, Bo; Wang, Zeyan; Zhang, Xiaoyang; Qin, Xiaoyan; Wang, Peng; Liu, Yuanyuan; Li, Mengmeng; Dai, Ying; Li, Yingjie; Huang, Baibiao
• Is Part Of: Materials today energy. Volume 6(2017)
• Page Start: 65
• Page End: 71
• Publication Date: 2017-12
• Subjects: In2O3/ZnO hetero-epitaxial-junction -- Visible light absorption -- Charge separation -- In2O3 {100} facets -- Photoelectrochemical water splitting; Energy development -- Periodicals; Energy industries -- Periodicals; Power resources -- Periodicals; Energy policy -- Periodicals; Energy development; Energy industries; Energy policy; Power resources; Electronic journals; Periodicals; 621.042
• DOI: 10.1016/j.mtener.2017.07.011
• Languages: English
• ISSNs: 2468-6069

Abstract

Abstract: In2 O3 /ZnO hetero-epitaxial-junction photoanodes were successfully synthesized and applied for the photoelectrochemical splitting of water. With the assistance of In2 O3, the light absorption of In2 O3 /ZnO heterojunctions can effectively expand to visible light absorption region. Due to the epitaxial relationship between (10-10) ZnO and {-211} In2 O3 planes, the staggered band alignments between In2 O3 and ZnO can produce a built in electric field at the heterojunction interface with a high quality, which can promote the charge separation and lower the charge recombination under light irradiation. Moreover, low index crystal facets, such as {001} and {111} facets, with lower surface energies can be formed spontaneously in In2 O3 nanoparticles due to the surface energy conservation. And the presence of In2 O3 {001} facets can effectively lower the onset potential and facilitate the water oxidation. With the synergistic effects mentioned above, In2 O3 /ZnO-6 exhibit highest photocurrent density of 2.2 mA cm −2 at 0.6 V vs Ag/AgCl and IPCE value of 88.62% at 0.25 V vs Ag/AgCl (370 nm), which is 2.82 and 4.4 times as high as that of ZnO NRs and In2 O3 photoanodes, respectively. Highlights: In2 O3 /ZnO hetero-epitaxial-junction photoanodes were successfully synthesized. Staggered band alignment of heterojunction facilitate the charge separation. The epitaxial relationship between {100} ZnO and {-211} In2 O3 planes. The In2 O3 {100} facets lower the overpotential for O2 evolution. The In2 O3 /ZnO photoelectrode exhibits visible light photoresponse.