A novel high accuracy bandgap reference voltage source. Issue 4 (6th November 2017)
- Record Type:
- Journal Article
- Title:
- A novel high accuracy bandgap reference voltage source. Issue 4 (6th November 2017)
- Main Title:
- A novel high accuracy bandgap reference voltage source
- Authors:
- Wang, Songlin
Feng, Shuang
Wang, Hui
Yao, Yu
Mao, Jinhua
Lai, Xinquan - Abstract:
- Abstract : Purpose: This paper aims to design a new bandgap reference circuit with complementary metal–oxide–semiconductor (CMOS) technology. Design/methodology/approach: Different from the conventional bandgap reference circuit with operational amplifiers, this design directly connects the two bases of the transistors with both the ends of the resistor. The transistor acts as an amplifier to amplify the change of voltage, which is convenient for the feedback regulation of low dropout regulator (LDO) regulator circuit, at last to realize the temperature control. In addition, introducing the depletion-type metal–oxide–semiconductor transistor and the transistor operating in the saturation region through the connection of the novel circuit structure makes a further improvement on the performance of the whole circuit. Findings: This design is base on the 0.18?m process of BCD, and the new bandgap reference circuit is verified. The results show that the circuit design not only is simple and novel but also can effectively improve the performance of the circuit. Bandgap voltage reference is an important module in integrated circuits and electronic systems. To improve the stability and performance of the whole circuit, simple structure of the bandgap reference voltage source is essential for a chip. Originality/value: This paper adopts a new circuit structure, which directly connects the two base voltages of the transistors with the resistor. And the transistor acts as an amplifierAbstract : Purpose: This paper aims to design a new bandgap reference circuit with complementary metal–oxide–semiconductor (CMOS) technology. Design/methodology/approach: Different from the conventional bandgap reference circuit with operational amplifiers, this design directly connects the two bases of the transistors with both the ends of the resistor. The transistor acts as an amplifier to amplify the change of voltage, which is convenient for the feedback regulation of low dropout regulator (LDO) regulator circuit, at last to realize the temperature control. In addition, introducing the depletion-type metal–oxide–semiconductor transistor and the transistor operating in the saturation region through the connection of the novel circuit structure makes a further improvement on the performance of the whole circuit. Findings: This design is base on the 0.18?m process of BCD, and the new bandgap reference circuit is verified. The results show that the circuit design not only is simple and novel but also can effectively improve the performance of the circuit. Bandgap voltage reference is an important module in integrated circuits and electronic systems. To improve the stability and performance of the whole circuit, simple structure of the bandgap reference voltage source is essential for a chip. Originality/value: This paper adopts a new circuit structure, which directly connects the two base voltages of the transistors with the resistor. And the transistor acts as an amplifier to amplify the change of voltage, which is convenient for the feedback regulation of LDO regulator circuit, at last to realize the temperature control. … (more)
- Is Part Of:
- Circuit world. Volume 43:Issue 4(2017)
- Journal:
- Circuit world
- Issue:
- Volume 43:Issue 4(2017)
- Issue Display:
- Volume 43, Issue 4 (2017)
- Year:
- 2017
- Volume:
- 43
- Issue:
- 4
- Issue Sort Value:
- 2017-0043-0004-0000
- Page Start:
- 141
- Page End:
- 144
- Publication Date:
- 2017-11-06
- Subjects:
- Band gap -- Reference -- Temperature coefficient
Electronic circuits -- Design and construction -- Periodicals
Electronic circuits -- Periodicals
621.381505 - Journal URLs:
- http://firstsearch.oclc.org ↗
http://www.emeraldinsight.com/0305-6120.htm ↗
http://www.emeraldinsight.com/cw.htm ↗
http://www.emeraldinsight.com/journals.htm?issn=0305-6120 ↗
http://www.emeraldinsight.com/ ↗ - DOI:
- 10.1108/CW-04-2017-0019 ↗
- Languages:
- English
- ISSNs:
- 0305-6120
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 3198.839000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 5405.xml