Nanoscale Ferromagnetic Cobalt‐Doped ZnO Structures Formed by Deep‐UV Direct‐Patterning. Issue 22 (13th September 2017)

• Record Type: Journal Article
• Authors: Yeh, Chun‐Cheng; Colis, Silviu; Fioux, Philippe; Zan, Hsiao‐Wen; Berling, Dominique; Soppera, Olivier
• Is Part Of: Advanced materials interfaces. Volume 4:Issue 22(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-09-13
• Subjects: diluted magnetic semiconductor -- doping -- nanostructure -- photopatterning -- ZnO; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.201700738
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract: Cobalt (II) acetate is mixed with zinc methacrylate (ZnMAA) to form a photopatternable Co‐doped zinc oxide precursor. By using deep‐UV (DUV) interference lithography, Co‐doped ZnMAA precursor can be patterned as negative tone resist and transformed into ferromagnetic Co:ZnO films after thermal treatment. Moreover, Co:ZnO patterns as small as 300 nm line‐width can be easily obtained. To have an in‐depth understanding to the effect of DUV‐patterning process as well as thermal annealing on Co:ZnO films derived from Co‐doped ZnMAA precursor, optical, magnetic, and electrical characterizations are performed on Co:ZnO films prepared in different conditions. For the Co:ZnO film prepared without DUV‐patterning, large zero‐field‐cooling (ZFC)–field‐cooling (FC) irreversibility appears in superconducting quantum interference device measurements after vacuum annealing, indicating that Co clusters have formed inside the film. On the other hand, no ZFC–FC bifurcation can be observed for the DUV‐patterned Co:ZnO film after the vacuum annealing, suggesting that the uniformity of Co ion distribution inside ZnO lattice is improved by DUV‐patterning. Abstract : With the use of deep‐UV (DUV) interference patterning and photosensitive Co‐doped zinc methacrylate (ZnMAA) precursor, nanoscale Co:ZnO patterns can be easily obtained. The effects of DUV‐patterning as well as thermal annealing on the magnetic properties of Co:ZnO films derived from Co‐doped ZnMAA precursor are investigated. The results indicate that the uniformity of Co ions in ZnO lattice is improved by DUV‐patterning.