RF bias to suppress post-oxidation of μc-Si:H films deposited by inductively-coupled plasma using a planar RF resonant antenna. (January 2018)

• Record Type: Journal Article
• Authors: Demolon, P.; Guittienne, Ph.; Howling, A.A.; Jost, S.; Jacquier, R.; Furno, I.
• Is Part Of: Vacuum. Volume 147(2018)
• Page Start: 58
• Page End: 64
• Publication Date: 2018-01
• Subjects: Microcrystalline silicon -- Inductively-coupled plasma -- RF bias -- Resonant antenna -- Post-oxidation; Vacuum -- Periodicals; 621.55
• DOI: 10.1016/j.vacuum.2017.10.020
• Languages: English
• ISSNs: 0042-207X

Abstract

Abstract: One challenge for microcrystalline silicon (μc-Si:H) deposition is to achieve high deposition rates while maintaining high quality films. In this work, an inductively-coupled plasma (ICP) is used to deposit μc-Si:H on glass substrates by means of a novel planar resonant antenna at 13.56 MHz. No particle formation occurs in the low pressure (5 Pa) plasma, but the films suffer post-oxidation. By embedding a 5 MHz RF-biased substrate, films deposited simultaneously with and without RF bias are compared. It is shown that large area, low pressure (5 Pa), particle-free ICP deposition at 1 nm/s of μc-Si:H films can be obtained without post-oxidation by means of a planar resonant antenna, provided that RF substrate bias is included for independent control of the ion energy. Highlights: Suppression of post-oxidation of μc-Si:H deposited by large area ICP. RF substrate bias necessary during deposition to avoid post-oxidation. Large area inductively-coupled plasma generated by novel planar resonant antenna. Simultaneous deposition with and without RF bias, using an embedded RF electrode. Low pressure, resonant antenna inductive source suppresses powder formation.