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HARVARD Citation
Lim, H. et al. (n.d.). Impact of thermal oxidation pressure and temperature on deactivation of the interfacial trap states in Al2O3/GaAs MOS capacitor. Physica status solidi. 212 (9), pp. 1911-1915. [Online].
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Lim, H. et al. (n.d.). Impact of thermal oxidation pressure and temperature on deactivation of the interfacial trap states in Al2O3/GaAs MOS capacitor. Physica status solidi. 212 (9), pp. 1911-1915. [Online].