Design of Core–Shell‐Structured ZnO/ZnS Hybridized with Graphite‐Like C3N4 for Highly Efficient Photoelectrochemical Water Splitting. Issue 21 (25th August 2017)

• Record Type: Journal Article
• Authors: Liu, Changhai; Qiu, Yangyang; Wang, Fang; Wang, Ke; Liang, Qian; Chen, Zhidong
• Is Part Of: Advanced materials interfaces. Volume 4:Issue 21(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-08-25
• Subjects: band alignment -- heterojunction -- photo‐electrochemistry -- sulfuration -- ZnO; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.201700681
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract: Numerous efforts have been focused on the heterojunction structure for enhancing the electron injection across the interface in application of photocatalysis or photoelectrochemical (PEC) catalysis. The electrochemically deposited ZnO nanorods arrays are sulfurated following hydrothermal reaction to form core–shell heterojunction structure. Furthermore, the graphite‐like C3 N4 (g‐C3 N4 ) is added into the formed ZnO/ZnS core–shell nanorods during the sulfuration process to get ZnO/ZnS/g‐C3 N4 photoanode. The heterojunction structure is characterized via X‐ray diffraction, scanning electron microscope, X‐ray photoelectron spectroscopy, transmission electron microscopy, UV‐vis diffuse‐reflectance spectra, time‐resolved photoluminescence, and Raman. The ZnO/ZnS/g‐C3 N4 photoanode yields a photocurrent of ≈0.66 mA cm −2 at 1.23 V versus reversible hydrogen electrode, which is fourfold as large as pure ZnO electrode. The enhanced photocurrent is attributed to the improved separation efficiency of photogenerated electron–hole pairs and accelerated transport of hole to the electrode surface for the oxidation of water. These results suggest substantial potential of metal oxide nanorods arrays with controlled heterojunction construction in PEC water splitting applications. Abstract : ZnO/ZnS/g‐C3 N4 heterostructured nanorods are developed to improve the photoelectrochemical activity for water splitting. The coating of g‐C3 N4 on the surface of ZnO and ZnS can also prevent the semiconductors from dissolving during the long‐term stability.