Electrochemical Tantalum Oxide for Resistive Switching Memories. Issue 43 (6th October 2017)

• Record Type: Journal Article
• Authors: Zaffora, Andrea; Cho, Deok‐Yong; Lee, Kug‐Seung; Di Quarto, Francesco; Waser, Rainer; Santamaria, Monica; Valov, Ilia
• Is Part Of: Advanced materials. Volume 29:Issue 43(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-10-06
• Subjects: anodic thin films -- multilevel -- resistive switching -- ReRAMs -- tantalum oxide; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201703357
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: Redox‐based resistive switching memories (ReRAMs) are strongest candidates for the next‐generation nonvolatile memories fulfilling the criteria for fast, energy efficient, and scalable green IT. These types of devices can also be used for selector elements, alternative logic circuits and computing, and memristive and neuromorphic operations. ReRAMs are composed of metal/solid electrolyte/metal junctions in which the solid electrolyte is typically a metal oxide or multilayer oxides structures. Here, this study offers an effective and cheap electrochemical approach to fabricate Ta/Ta2 O5 ‐based devices by anodizing. This method allows to grow high‐quality and dense oxide thin films onto a metallic substrates with precise control over morphology and thickness. Electrochemical‐oxide‐based devices demonstrate superior properties, i.e., endurance of at least 10 6 pulse cycles and/or 10 3 I – V sweeps maintaining a good memory window with a low dispersion in R OFF and R ON values, nanosecond fast switching, and data retention of at least 10 4 s. Multilevel programing capability is presented with both I – V sweeps and pulse measurements. Thus, it is shown that anodizing has a great prospective as a method for preparation of dense oxide films for resistive switching memories. Abstract : Electrochemical oxides prepared by anodizing are a reliable and cheap approach for producing solid electrolytes for redox‐based resistive switching memories (ReRAMs). Valence‐changememories devices based on anodic Ta2 O5 demonstrate high retention, endurance, switching times within nanoseconds, and low switching voltages. They have a high yield, extremely low variability, and offer defined multilevels. This approach is also valuable for 3D integration.