Localized Surface Plasmon Induced Position‐Sensitive Photodetection in Silicon‐Nanowire‐Modified Ag/Si. Issue 41 (22nd September 2017)

• Record Type: Journal Article
• Authors: Mei, Chunlian; Liu, Shuai; Huang, Xu; Gan, Zhikai; Zhou, Peiqi; Wang, Hui
• Is Part Of: Small. Volume 13:Issue 41(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-09-22
• Subjects: lateral photovoltaic effect -- light trapping -- localized surface plasmons -- silicon nanowires -- silver nanoparticles; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201701726
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract: Surface plasmon‐based approaches are widely applied to improve the efficiency of photoelectric devices such as photosensors and photocells. In order to promote the light absorption and electron–hole pair generation in devices, metallodielectric nanostructures are used to boost the growth of surface plasmons. Here, silicon nanowires (SiNWs) are used to modify a metal–semiconductor structure; thus, Ag/SiNWs/Si is manufactured. In this system, a large increased lateral photovoltaic effect (LPE) is detected with a maximum positional sensitivity of 65.35 mV mm −1, which is ≈53‐fold and 1000‐fold compared to the conventional Ag/Si (1.24 mV mm −1 ) and SiNWs/Si (0.06 mV mm −1 ), respectively. It is demonstrated that localized surface plasmons (LSPs) contribute a lot to the increment of LPE. Furthermore, through the surface‐enhanced Raman scattering spectra of rhodamine‐6G and finite‐difference time‐domain simulation, it is illustrated that silver‐coated SiNWs support strong LSPs. The results propose an enhancement mechanism based on LSPs to facilitate the photoelectric conversion in LPE and offer an effective way to improve the sensitivity of photodetectors. Abstract : Sensitivity is one of the main technical specifications of position‐sensitive detectors . However, weak light absorption and low photoelectric conversion are two limitations to obtain prominent sensitivity. Based on localized surface plasmon, a large enhanced lateral photovoltaic effect is detected in a silicon nanowire‐modified metal–semiconductor structure. Thus, a high position‐dependent sensitivity is achieved in the millimeter range.