Controlled growth of aligned GaN nanostructures: from nanowires and needles to micro-rods on a single substrate. Issue 80 (1st November 2017)

• Record Type: Journal Article
• Authors: Zhao, Danna; Huang, Hui; Lv, Rui; Chen, Shunji; Guang, Qiyilan; Zong, Yang; Liu, Zhe; Li, Xiqing
• Is Part Of: RSC advances. Volume 7:Issue 80(2017)
• Page Start: 50781
• Page End: 50785
• Publication Date: 2017-11-01
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c7ra09813h
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : Growth of aligned GaN nanostructures by tuning the substrate distance and the growth pressure. Abstract : Simultaneous growth of different kinds of aligned GaN nanostructures ( i.e., nanowires, needles, pyramids and micro-rods) on a single substrate was firstly realized at a low temperature of 790 °C by naturally changing the III/V ratio across the substrate via a coaxial pipeline configuration. The effects of substrate distance and growth pressure on nanostructure growth were investigated. The morphology variation from nanowires to micros-rods would be explained in terms of Ga species changing from the Ga element to GaN molecule in a hot-wall reactor. This work is helpful for on chip integration of different kinds of nanodevices on unusual substrates of low melting temperature.