Solution-processed indium oxide electron transporting layers for high-performance and photo-stable perovskite and organic solar cells. Issue 42 (19th October 2017)
- Record Type:
- Journal Article
- Title:
- Solution-processed indium oxide electron transporting layers for high-performance and photo-stable perovskite and organic solar cells. Issue 42 (19th October 2017)
- Main Title:
- Solution-processed indium oxide electron transporting layers for high-performance and photo-stable perovskite and organic solar cells
- Authors:
- Yoon, Seokhyun
Kim, Si Joon
Kim, Harrison S.
Park, Joon-Suh
Han, Il Ki
Jung, Jae Woong
Park, Minwoo - Abstract:
- Abstract : Pin-hole free and conductive In2 O3 electron transporting layers lead to a power conversion efficiency of 14.63% in a perovskite solar cell and 3.03% in an organic solar cell. Abstract : Interface engineering is considered the key to improving the device performance and stability of solar cells. In particular, TiO2 nanostructures, when used as electron transporting layers (ETLs) in metal halide perovskite solar cells (PSCs), led to excellent power conversion efficiencies (PCEs) of over 20%. They effectively transferred charge carriers from the perovskite and suppressed charge recombination at the interfaces. However, the photocatalytic effect of TiO2 on the perovskite can significantly degrade the device performance under ultraviolet illumination. Therefore, other classes of n-type metal oxides with a wide band gap should be developed to improve their photo-stability. Herein, we demonstrate the development of In2 O3 thin films by a solution process and their application as ETLs in PSCs and organic solar cells (OSCs). Pin hole-free In2 O3 ETLs obtained by the thermal decomposition of an In precursor thin film exhibit high conductivity (2.49 × 10 −4 S cm −1 ) and low surface roughness (7.33 nm). This leads to impressive PCEs of 14.63% and 3.03% for the PSC and the inverted OSC, respectively. Furthermore, the In2 O3 -PSC shows better photo-stability than the TiO2 -PSC by virtue of the wider band gap of In2 O3, which leads to a PCE retention of 74% and 46%, relativeAbstract : Pin-hole free and conductive In2 O3 electron transporting layers lead to a power conversion efficiency of 14.63% in a perovskite solar cell and 3.03% in an organic solar cell. Abstract : Interface engineering is considered the key to improving the device performance and stability of solar cells. In particular, TiO2 nanostructures, when used as electron transporting layers (ETLs) in metal halide perovskite solar cells (PSCs), led to excellent power conversion efficiencies (PCEs) of over 20%. They effectively transferred charge carriers from the perovskite and suppressed charge recombination at the interfaces. However, the photocatalytic effect of TiO2 on the perovskite can significantly degrade the device performance under ultraviolet illumination. Therefore, other classes of n-type metal oxides with a wide band gap should be developed to improve their photo-stability. Herein, we demonstrate the development of In2 O3 thin films by a solution process and their application as ETLs in PSCs and organic solar cells (OSCs). Pin hole-free In2 O3 ETLs obtained by the thermal decomposition of an In precursor thin film exhibit high conductivity (2.49 × 10 −4 S cm −1 ) and low surface roughness (7.33 nm). This leads to impressive PCEs of 14.63% and 3.03% for the PSC and the inverted OSC, respectively. Furthermore, the In2 O3 -PSC shows better photo-stability than the TiO2 -PSC by virtue of the wider band gap of In2 O3, which leads to a PCE retention of 74% and 46%, relative to the initial PCE values of the PSC and the inverted OSC, respectively. … (more)
- Is Part Of:
- Nanoscale. Volume 9:Issue 42(2017)
- Journal:
- Nanoscale
- Issue:
- Volume 9:Issue 42(2017)
- Issue Display:
- Volume 9, Issue 42 (2017)
- Year:
- 2017
- Volume:
- 9
- Issue:
- 42
- Issue Sort Value:
- 2017-0009-0042-0000
- Page Start:
- 16305
- Page End:
- 16312
- Publication Date:
- 2017-10-19
- Subjects:
- Nanoscience -- Periodicals
Nanotechnology -- Periodicals
620.505 - Journal URLs:
- http://www.rsc.org/Publishing/Journals/NR/Index.asp ↗
http://www.rsc.org/ ↗ - DOI:
- 10.1039/c7nr05695h ↗
- Languages:
- English
- ISSNs:
- 2040-3364
- Deposit Type:
- Legaldeposit
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- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 9830.266000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 5317.xml