Temperature stable high K microwave dielectric ceramics of Bi3NbO7 doped by V2O5. Issue 3 (April 2015)

• Record Type: Journal Article
• Authors: Pang, Li-Xia; Liu, Wei-Guo; Zhou, Di
• Is Part Of: Ceramics international. Volume 41:Issue 3(2015)Part B
• Page Start: 5182
• Page End: 5185
• Publication Date: 2015-04
• Subjects: Sintering -- Dielectric properties -- Capacitors; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2014.12.024
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: Low firing microwave dielectric ceramics Bi3 (Nb1− x Vx )O7 ( x =0.0, 0.1, 0.2, 0.3, and 0.5) were prepared by the solid state reaction method. Sintering behavior, crystalline structure, microstructure, and microwave dielectric properties were studied. Temperature stable low-firing microwave dielectric ceramics with high permittivity were obtained in the Bi3 (Nb1− x Vx )O7 system when x =0.1 and 0.2. The Bi3 (Nb0.9 V0.1 )O7 and Bi3 (Nb0.8 V0.2 )O7 ceramics sintered at 870 °C for 2 h were found to possess high permittivity of 80 and 76, Qf (quality factor) values of 615 and 460 GHz, and TCF (temperature coefficient of frequency) values of −22 and+3.3 ppm/°C, respectively.