Fabrication and characterisation of non-polar M-plane AlN crystals and LEDs. (May 2015)

• Record Type: Journal Article
• Authors: Wu, H.; Zheng, R.; Guo, Y.; Yan, Z.
• Is Part Of: Materials research innovations. Volume 19(2015)Supplement 5
• Page Start: S5-1153
• Page End: S5-1155
• Publication Date: 2015-05
• Subjects: Non-polar -- Crystal -- Ultra-violet -- Semiconductor materials -- AlN -- Electroluminescent; Materials -- Research -- Periodicals; Matériaux -- Recherche -- Périodiques; 620.1105
• DOI: 10.1179/1432891714Z.0000000001268
• Languages: English
• ISSNs: 1432-8917

Abstract

Abstract : Aluminium nitride crystals and devices grown along the polar c -axis direction are affected by the strong spontaneous and piezoelectric polarisation fields. It is necessary to grow non-polar plane aluminium nitride crystals in order to solve the problem. The M-plane surface-oriented aluminium nitride single crystals were grown by physical vapour transport on a resistance heating furnace, which was designed by ourselves and included two heaters on sublimation region and crystalline region, respectively. The M-plane aluminium nitride light-emitting diode was further fabricated and characterised. The current–voltage characteristic showed a Schottky diode behaviour. A white light emission from the biased diode can be clearly seen by naked eyes in a dark place at room temperature. The ultra-wide electroluminescent spectrum covered from deep UV (200 nm) to infrared (1100 nm) and centred at 496 nm (2·5 eV). At last, the emission mechanism was discussed.