InAlN/GaN HEMTs based L-band high-power packaged amplifiers. Issue 6 (25th February 2014)

• Record Type: Journal Article
• Authors: Jardel, Olivier; Jacquet, Jean-Claude; Baczkowski, Lény; Carisetti, Dominique; Lancereau, Didier; Olivier, Maxime; Aubry, Raphaël; di Forte Poisson, Marie-Antoinette; Dua, Christian; Piotrowicz, Stéphane; Delage, Sylvain L.
• Editors: Sadek, Sawsan; Essaaidi, Mohammed
• Is Part Of: International journal of microwave and wireless technologies. Volume 6:Issue 6(2014)
• Page Start: 565
• Page End: 572
• Publication Date: 2014-02-25
• Subjects: Technologies and devices (III–V, nano, quantum, opto), -- Power amplifiers and linearizers; Wireless communication systems -- Periodicals; Microwave circuits -- Periodicals; Radio frequency -- Periodicals; 621.381305
• DOI: 10.1017/S175907871400004X
• Languages: English
• ISSNs: 1759-0787

Abstract

Abstract : This paper presents power results of L-band packaged hybrid amplifiers using InAlN/GaN/SiC HEMT power dies. The high-power densities achieved both in pulsed and continuous wave (cw) modes confirm the interest of such technology for high-frequency, high-power, and high-temperature operation. We present here record RF power measurements for different versions of amplifiers. Up to 260 W, i.e. 3.6 W/mm, in pulsed (10 µs/10%) conditions, and 105 W, i.e. 2.9 W/mm, in cw conditions were achieved. Such results are made possible thanks to the impressive performances of InAlN/GaN transistors, even when operating at high temperatures. Unit cell transistors deliver output powers of 4.3 W/mm at Vds = 40 V in the cw mode of operation at the frequency of 2 GHz. The transistor process is described here, as well as the amplifiers design and measurements, with a particular focus to the thermal management aspects.