An Amidine‐Type n‐Dopant for Solution‐Processed Field‐Effect Transistors and Perovskite Solar Cells. (8th September 2017)

• Record Type: Journal Article
• Authors: Hu, Lin; Liu, Tiefeng; Duan, Jiashun; Ma, Xiaoyi; Ge, Congwu; Jiang, Youyu; Qin, Fei; Xiong, Sixing; Jiang, Fangyuan; Hu, Bin; Gao, Xike; Yi, Yuanping; Zhou, Yinhua
• Is Part Of: Advanced functional materials. Volume 27:Number 41(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-09-08
• Subjects: 1, 8‐Diazabicyclo[5.4.0] undec‐7‐ene (DBU) -- doping -- electron transfer -- field‐effect transistors -- perovskite solar cells; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201703254
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract: This study reports an effective amidine‐type n‐dopant of 1, 8‐Diazabicyclo[5.4.0]undec‐7‐ene (DBU) that can universally dope electron acceptors, including PC61 BM, N2200, and ITIC, by mixing the dopant with the acceptors in organic solvents or exposing the acceptor films in the dopant vapor. The doping mechanism is due to its strong electron‐donating property that is also confirmed via the chemical reduction of PEDOT:PSS (yielding color change). The DBU doping considerably increases the electrical conductivity and shifts the Fermi levels up of the PC61 BM films. When the DBU‐doped PC61 BM is used as an electron‐transporting layer in perovskite solar cells, the n‐doping removes the "S‐shape" of J – V characteristics, which leads to the fill factor enhancement from 0.54 to 0.76. Furthermore, the DBU doping can effectively lower the threshold voltage and enhance the electron mobility of PC61 BM‐based n‐channel field‐effect transistors. These results show that the DBU can be a promising n‐dopant for solution‐processed electronics. Abstract : An effective, solution‐processed amidine‐type n‐dopant of 1, 8‐diazabicyclo[5.4.0]undec‐7‐ene (DBU), which can universally dope electron acceptor materials, including PC61 BM, N2200, and ITIC, is reported. The DBU doping can enhance the performance of the perovskite solar cells and the electron mobility of the field‐effect transistors.