Cesium Doped NiOx as an Efficient Hole Extraction Layer for Inverted Planar Perovskite Solar Cells. Issue 19 (12th June 2017)

• Record Type: Journal Article
• Authors: Chen, Wei; Liu, Fang‐Zhou; Feng, Xi‐Yuan; Djurišić, Aleksandra B.; Chan, Wai Kin; He, Zhu‐Bing
• Is Part Of: Advanced energy materials. Volume 7:Issue 19(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-06-12
• Subjects: cesium doping -- nickel oxide -- organometallic halide perovskite -- solar cells; Energy harvesting -- Materials -- Periodicals; Energy conversion -- Materials -- Periodicals; Energy storage -- Materials -- Periodicals; Photovoltaics -- Periodicals; Fuel cells -- Periodicals; Thermoelectric materials -- Periodicals; 621.31
• DOI: 10.1002/aenm.201700722
• Languages: English
• ISSNs: 1614-6832

Abstract

Abstract: Organic–inorganic hybrid perovskite solar cells have resulted in tremendous interest in developing next generation photovoltaics due to high record efficiency exceeding 22%. For inverted structure perovskite solar cells, the hole extraction layers play a significant role in achieving efficient and stable perovskite solar cell by modifying charge extraction, interfacial recombination losses, and band alignment. Here, cesium doped NiO x is selected as a hole extraction layer to study the impact of Cs dopant on the optoelectronic properties of NiO x and the photovoltaic performance. Cs doped NiO x films are prepared by a simple solution‐based method. Both doped and undoped NiO x films are smooth and highly transparent, while the Cs doped NiO x exhibits better electron conductivity and higher work function. Therefore, Cs doping results in a significant improvement in the performance of NiO x ‐based inverted planar perovskite solar cells. The best efficiency of Cs doped NiO x devices is 19.35%, and those devices show high stability as well. The improved efficiency in devices with Cs:NiO x is attributed to a significant improvement in the hole extraction and better band alignment compared to undoped NiO x . This work reveals that Cs doped NiO x is very promising hole extraction material for high and stable inverted perovskite solar cells. Abstract : Cesium doping of NiO x enhances the conductivity of the oxide film and the hole extraction from the perovskite film in inverted planar perovskite solar cells. Significantly improved photovoltaic performance is obtained with the best efficiencies of 16.04% and 19.35% for NiO x and Cs:NiO x, respectively. The devices exhibit negligible hysteresis and good stability.