Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2. Issue 4 (8th January 2016)

• Record Type: Journal Article
• Authors: Campbell, Philip M.; Tarasov, Alexey; Joiner, Corey A.; Tsai, Meng-Yen; Pavlidis, Georges; Graham, Samuel; Ready, W. Jud; Vogel, Eric M.
• Is Part Of: Nanoscale. Volume 8:Issue 4(2016)
• Page Start: 2268
• Page End: 2276
• Publication Date: 2016-01-08
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c5nr06180f
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : This work demonstrates the synthesis of large-area WSe2 with excellent uniformity across the wafer scale. Abstract : The synthesis of few-layer tungsten diselenide (WSe2 ) via chemical vapor deposition typically results in highly non-uniform thickness due to nucleation initiated growth of triangular domains. In this work, few-layer p-type WSe2 with wafer-scale thickness and electrical uniformity is synthesized through direct selenization of thin films of e-beam evaporated W on SiO2 substrates. Raman maps over a large area of the substrate show small variations in the main peak position, indicating excellent thickness uniformity across several square centimeters. Additionally, field-effect transistors fabricated from the wafer-scale WSe2 films demonstrate uniform electrical performance across the substrate. The intrinsic field-effect mobility of the films at a carrier concentration of 3 × 10 12 cm −2 is 10 cm 2 V −1 s −1 . The unprecedented uniformity of the WSe2 on wafer-scale substrates provides a substantial step towards producing manufacturable materials that are compatible with conventional semiconductor fabrication processes.