Electrochemical Ostwald ripening and surface diffusion in the galvanic displacement reaction: control over particle growth. Issue 114 (3rd November 2015)

• Record Type: Journal Article
• Authors: Ghosh, Tapas; Karmakar, Prasanta; Satpati, Biswarup
• Is Part Of: RSC advances. Volume 5:Issue 114(2015)
• Page Start: 94380
• Page End: 94387
• Publication Date: 2015-11-03
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c5ra20297c
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : We could control the particle growth in the galvanic displacement reaction on amorphous Ge substrate by introducing reduced electron mobility and surface defects over crystalline Ge, where electrochemical Ostwald ripening has been observed. Abstract : We report the role of electrochemical Ostwald ripening and the galvanic displacement reaction in uniform particle formation on ion bombarded amorphous ( i.e., composed of random atomic spacings) Ge (a-Ge) surfaces compared to crystalline germanium (c-Ge). Silver growth on c-Ge and a-Ge substrates by electroless deposition has been studied by atomic force microscopy (AFM), cross-sectional transmission electron microscopy (XTEM), and energy dispersive X-ray spectroscopy (EDX). Introduction of defects can provide a control over particle growth by the galvanic displacement reaction that may offer continuous film growth up to a definite thickness. The possibility of surface diffusion and its consequences have also been discussed.