A simple synthesis of Ga2O3 and GaN nanocrystals. Issue 76 (12th October 2017)

• Record Type: Journal Article
• Authors: Huang, Erwei; Li, Juxia; Wu, Guangjun; Dai, Weili; Guan, Naijia; Li, Landong
• Is Part Of: RSC advances. Volume 7:Issue 76(2017)
• Page Start: 47898
• Page End: 47903
• Publication Date: 2017-10-12
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c7ra10639d
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : A simple top-down strategy to α-Ga2 O3 and GaN nanocrystals is developed and the morphology-dependent optical properties of α-Ga2 O3 crystals are established. Abstract : The synthesis of gallium oxide and nitride nanocrystals is challenging. Herein, a forced hydrolysis route is developed to synthesize α-GaOOH and the morphology control of nanocrystals is realized by adjusting the ratios of ionic strength in the synthesis system. The as-prepared α-GaOOH nanorods can be transformed into α-Ga2 O3 nanorods upon calcination and can be further transformed into GaN nanocrystal assemblies through nitridation at elevated temperatures, which provides a top-down strategy to gallium oxide and nitride nanocrystals. The synthesis results are investigated by means of X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The optical properties, i.e. ultra-violet visible absorption (UV-vis) and photoluminescence, of as-obtained α-Ga2 O3 nanocrystals with different morphologies are examined and the morphology–property relationship is discussed.