Fabrication and characterisation of NiO:Na/ZnO pn junction by magnetron sputtering technique. (July 2014)

• Record Type: Journal Article
• Authors: Li, T.; Jie, Q.; Ni, X.; Wang, Y.; Zhao, X.
• Is Part Of: Materials research innovations. Volume 18(2014)Supplement 4
• Page Start: S4-680
• Page End: S4-683
• Publication Date: 2014-07
• Subjects: NiO, -- Na doping, -- ZnO, -- pn junction, -- Transparent diode, -- I-V characteristics; Materials -- Research -- Periodicals; Matériaux -- Recherche -- Périodiques; 620.1105
• DOI: 10.1179/1432891714Z.000000000759
• Languages: English
• ISSNs: 1432-8917

Abstract

Abstract : Transparent all oxide pn junction film diode consisting of p-type NiO:Na and n-type ZnO was fabricated by magnetron sputtering method on Si substrate. These films were characterised by diffraction (XRD), atomic force microscopy (AFM) and UV-visible spectroscopy. XRD results show that NiO:Na film had a preferred orientation along the (111) direction while ZnO film was highly oriented along the (002) direction. The optical transmittance of NiO:Na and ZnO films were 60 and 80% respectively. I-V characteristic of NiO:Na/ZnO junction showed rectification. The junction parameters such as ideality factor, barrier height and series resistance were determined using conventional forward bias I-V characteristics and the Cheung method.