Epitaxial growth of single crystalline film phosphors based on the Ce3+-doped Ca2YMgScSi3O12 garnet. Issue 26 (23rd June 2017)

• Record Type: Journal Article
• Authors: Gorbenko, V.; Zorenko, T.; Paprocki, K.; Iskaliyeva, A.; Fedorov, A.; Schröppel, F.; Levchuk, I.; Osvet, A.; Batentschuk, M.; Zorenko, Yu.
• Is Part Of: CrystEngComm. Volume 19:Issue 26(2017)
• Page Start: 3689
• Page End: 3697
• Publication Date: 2017-06-23
• Subjects: Crystals -- Periodicals; Crystal growth -- Periodicals; Crystallography -- Periodicals; Cristaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Cristallographie -- Périodiques; 548
• DOI: 10.1039/c7ce00630f
• Languages: English
• ISSNs: 1466-8033

Abstract

Abstract : We present for the first time the results on crystallization and investigation of the luminescence properties of new prospective phosphors based on single crystalline films of Ce 3+ -doped Ca2 YMgScSi3 O12 garnet, grown by the liquid phase epitaxy method onto Y3 Al5 O12 substrates. Abstract : In this work, we present for the first time the results on crystallization and investigation of the luminescence properties of new prospective phosphors based on single crystalline films (SCFs) of Ce 3+ -doped Ca2 YMgScSi3 O12 silicate garnet, grown by the liquid phase epitaxy (LPE) method onto Y3 Al5 O12 (YAG) substrates. The luminescence properties of Ca2 YMgScSi3 O12 :Ce SCFs were compared with the properties of the reference YAG:Ce SCF sample. The influence of thermal annealing at 1000–1300 °C in a N2 /H2 reducing atmosphere on the optical properties of Ca2 YMgScSi3 O12 SCFs was investigated as well. The results of this research can be suitable for the development of a new generation of white LED converters and scintillators based on the epitaxial structures of Ca 2+ –Si 4+ containing garnets, grown by the LPE method onto undoped or doped substrates of garnet compounds.