Optical design of ZnO-based antireflective layers for enhanced GaAs solar cell performance. Issue 4 (6th January 2016)

• Record Type: Journal Article
• Authors: Lee, Hye Jin; Lee, Jae Won; Kim, Hee Jun; Jung, Dae-Han; Lee, Ki-Suk; Kim, Sang Hyeon; Geum, Dae-myeong; Kim, Chang Zoo; Choi, Won Jun; Baik, Jeong Min
• Is Part Of: Physical chemistry chemical physics. Volume 18:Issue 4(2016)
• Page Start: 2906
• Page End: 2912
• Publication Date: 2016-01-06
• Subjects: Chemistry, Physical and theoretical -- Periodicals; 541.3
• DOI: 10.1039/c5cp06274h
• Languages: English
• ISSNs: 1463-9076

Abstract

Abstract : A GaAs single junction solar cell with Al-doped ZnO nanosheet-based antireflection coatings was fabricated and showed the largest enhancement (43.9%) in power conversion efficiency. Abstract : A series of hierarchical ZnO-based antireflection coatings with different nanostructures (nanowires and nanosheets) is prepared hydrothermally, followed by means of RF sputtering of MgF2 layers for coaxial nanostructures. Structural analysis showed that both ZnO had a highly preferred orientation along the 〈0001〉 direction with a highly crystalline MgF2 shell coated uniformly. However, a small amount of Al was present in nanosheets, originating from Al diffusion from the Al seed layer, resulting in an increase of the optical bandgap. Compared with the nanosheet-based antireflection coatings, the nanowire-based ones exhibited a significantly lower reflectance (∼2%) in ultraviolet and visible light wavelength regions. In particular, they showed perfect light absorption at wavelength less than approximately 400 nm. However, a GaAs single junction solar cell with nanosheet-based antireflection coatings showed the largest enhancement (43.9%) in power conversion efficiency. These results show that the increase of the optical bandgap of the nanosheets by the incorporation of Al atoms allows more photons enter the active region of the solar cell, improving the performance.