Effect of solvent induced dielectric property modulation of poly(methyl methacrylate) insulator on the electrical and photosensing behaviour of p-channel organic transistors. (9th November 2017)

• Record Type: Journal Article
• Authors: Panigrahi, D.; Kumar, S.; Dhar, A.
• Is Part Of: Polymer. Volume 130(2017)
• Page Start: 79
• Page End: 87
• Publication Date: 2017-11-09
• Subjects: PMMA -- Solvent -- Polymer dielectrics -- OFET; Polymers -- Periodicals; Polymerization -- Periodicals; Polymères -- Périodiques; Polymérisation -- Périodiques; 547.7
• DOI: 10.1016/j.polymer.2017.09.065
• Languages: English
• ISSNs: 0032-3861

Abstract

Abstract: We have investigated the influence of solvent dipole moment on the dielectric properties of poly(methyl methacrylate) (PMMA) gate dielectric and unravel its effect on the OFET performance, environmental stability, and photosensitivity. The device performance improved substantially upon the use of high dipole moment solvents, however, it was also observed that such solvents can exacerbate the operational stability of the transistors. A detailed investigation of polymer bulk and surface properties revealed that the choice of solvents can strongly influence its micro-molecular structure, dipolar orientation and surface chemical composition which consequently, affect the device performance and stability by controlling the leakage characteristics, capacitance density, trap formation mechanism and charge trapping behaviour at dielectric/semiconductor interface. This report illustrates the requirement of proper solvent selection to achieve high electrical performance as well as long term operational stability. Our study also demonstrates that low dipole moment solvents are more favourable in transistors for photo-detection applications. Graphical abstract: Highlights: Solvent-induced modification of PMMA dielectric property explored in detail. Solvent property strongly correlates with the OFET performance and stability. Effect of solvent dipole moment on trap formation mechanisms is investigated. Optimum has been reached to produce high performance and stable OFET devices. Low dipole moment solvent devices exhibited excellent photo sensitivity.