Engineering two-dimensional electronics by semiconductor defects. (October 2017)

• Record Type: Journal Article
• Authors: Wang, Dan; Li, Xian-Bin; Han, Dong; Tian, Wei Quan; Sun, Hong-Bo
• Is Part Of: Nano today. Volume 16(2017)
• Page Start: 30
• Page End: 45
• Publication Date: 2017-10
• Subjects: Nanotechnology -- Periodicals; Nanosciences -- Périodiques; 620.505
• DOI: 10.1016/j.nantod.2017.07.001
• Languages: English
• ISSNs: 1748-0132

Abstract

Graphical abstract: Highlights: Importance of 2D semiconductors for nano/opto-electronics is discussed. Defect atomic pictures are summarized via various experiments. Two theoretical ways are used to evaluate electrical properties of defect. Direct relations between defect and electronic device performance are reviewed. A database of defects is summed up and the challenges are discussed. Abstract: Two-dimensional (2D) semiconductors have attracted considerable attentions from electronic-engineering community due to their unique electronic properties. Especially, the inherent advantage of scaling semiconductor into atomic thickness has raised the prospect of possible extension of the Moore's law. To achieve 2D electronics, a full comprehension of semiconductor defect physics and chemistry is indispensable due to its controlling electrical performance of 2D materials and functionalizing their devices. In this review, first we explain why 2D semiconductors is important for nanoelectronics and optoelectronics. Second, we elucidate how native defects or intentional impurities affect and control electrical characteristic in 2D semiconductors, such as carrier concentration and their conductive type. In this section, experimental pictures of defects and several updated theoretical methods to evaluate carrier ionization energies of defects and their conductive type are introduced in detail. Third, typical device experiments are shown to demonstrate a direct role of defects to functionalize 2D electronic device. Furthermore, a database of popular defects and their electrical properties in current popular 2D semiconductors is summarized for references. Last, we discuss the challenges and potential prospects of defect engineering for 2D devices. The present paper offers important viewpoints from semiconductor defects to design the emerging 2D electronics.