Energy Barriers: Gate‐Controlled Energy Barrier at a Graphene/Molecular Semiconductor Junction (Adv. Funct. Mater. 20/2015). (May 2015)

• Record Type: Journal Article
• Authors: Parui, Subir; Pietrobon, Luca; Ciudad, David; Vélez, Saül; Sun, Xiangnan; Casanova, Fèlix; Stoliar, Pablo; Hueso, Luis E.
• Is Part Of: Advanced functional materials. Volume 25:Number 20(2015)
• Page Start: 3103
• Page End: 3103
• Publication Date: 2015-05
• Subjects: energy barrier -- fullerene: graphene -- photocurrent -- vertical field effect transistor; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201570137
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : Graphene is an ideal candidate for the source electrode in a vertical organic field effect transistor as it has low density of states near the Dirac point and easy gate tunability of the Fermi‐level. On page 2972, S. Parui, L. Hueso, and team modulate the energy barrier at a graphene/molecular semiconductor (fullerene) junction by varying the gate electric field, thus opening a promising route toward molecular‐semiconductor based devices.