Control of Iron Disilicide Crystal Structure by Using Liquid Phase Obtained by Au-Si Eutectic Reaction. Issue 1760 (4th February 2015)

• Record Type: Journal Article
• Authors: Akiyama, Kensuke; Motoizumi, Yuu; Funakubo, Hiroshi
• Editors: Baker, I.; Heilmaier, M.; Kishida, K.; Mills, M.; Miura, S.
• Is Part Of: MRS proceedings. Issue 1760(2015)
• Publication Date: 2015-02-04
• Subjects: compound, -- luminescence, -- physical vapor deposition (PVD); Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2015.54
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: The Au-Si liquid phase was obtained by melting the Si surface via Au-Si eutectic reaction, which contributed to the formation of semiconducting iron disilicide (β-FeSi2 ), on Au-coated Si(100) substrates. By coating a substrate with an Au layer of 60 nm or more, the Au-Si liquid phase covered the entire Si substrate surface, and single-phase β-FeSi2 was grown on Si(100) substrates. A clear photoluminescence spectrum of β-FeSi2 indicated the formation of high-quality crystals with a low density of the non-radiative recombination center in the grains.