Organic field-effect transistor based on paramagnetic Cu(II) neutral complexes coordinated by Schiff base-type TTF ligands. (4th November 2017)

• Record Type: Journal Article
• Authors: Wachi, Atsushi; Kudo, Yusuke; Kanesaka, Aoba; Nishikawa, Hiroyuki; Shiga, Takuya; Oshio, Hiroki; Chikamatsu, Masayuki; Azumi, Reiko
• Is Part Of: Polyhedron. Volume 136(2017)
• Page Start: 70
• Page End: 73
• Publication Date: 2017-11-04
• Subjects: Molecular conductor -- Paramagnetic metal complex -- Tetrathiafulvalene -- Redox properties -- Field-effect transistor; Chemistry, Inorganic -- Periodicals; Chimie inorganique -- Périodiques; Organometaalverbindingen; Anorganische chemie; 546.05
• DOI: 10.1016/j.poly.2017.03.006
• Languages: English
• ISSNs: 0277-5387

Abstract

Graphical abstract: New paramagnetic Cu(II) complexes coordinated by Schiff base-type TTF-ligands have been synthesized and field-effect transistor (FET) devices with spin-coated films of the TTF-based metal complexes were fabricated. Thin film devices of new TTF-based metal complexes showed FET properties. AFM measurements revealed the surface morphologies of the thin films. Abstract: We have succeeded in preparation of novel paramagnetic Cu(II) complexes composed of tetrathiafulvalene (TTF)-based ligands as electrical conducting units, [Cu II (Bz-OMe- t Bu-sae-TTF)2 ], [Cu II (EDT-bissae-TTF)] and [Cu II (Bz-bis(OMe- t Bu-sae)-TTF)]. Electrochemical measurements of these neutral complexes revealed that they exhibited two pairs of redox waves attributed to the oxidation of TTF moieties. Among the newly synthesized TTF complexes, only [Cu II (EDT-bissae-TTF)] gave a radical salt by electrochemical crystallization, but its resistive behavior was insulating. Field-effect transistors (FET) were fabricated with spin-coated films of [Cu II (Bz-OMe- t Bu-sae-TTF)2 ] and [Cu II (EDT-bissae-TTF)], and their FET performances were very low compared with the conventional organic thin film transistors (OTFT) based on TTF derivatives. Atomic force microscopy (AFM) images of the spin-coated films indicated the non-uniform film surfaces with many small grains leading to the large grain boundaries, which probably causes the low carrier mobility of the FET devices.