Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application. Issue 14 (13th March 2015)

• Record Type: Journal Article
• Authors: Gao, Shuang; Zeng, Fei; Li, Fan; Wang, Minjuan; Mao, Haijun; Wang, Guangyue; Song, Cheng; Pan, Feng
• Is Part Of: Nanoscale. Volume 7:Issue 14(2015)
• Page Start: 6031
• Page End: 6038
• Publication Date: 2015-03-13
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c4nr06406b
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : The simple Pt/TaO x /n-Si structure exhibits a forming-free and self-rectifying resistive switching behavior and consequently possesses great potential for access device-free high-density memory applications. Abstract : The search for self-rectifying resistive memories has aroused great attention due to their potential in high-density memory applications without additional access devices. Here we report the forming-free and self-rectifying bipolar resistive switching behavior of a simple Pt/TaO x /n-Si tri-layer structure. The forming-free phenomenon is attributed to the generation of a large amount of oxygen vacancies, in a TaO x region that is in close proximity to the TaO x /n-Si interface, via out-diffusion of oxygen ions from TaO x to n-Si. A maximum rectification ratio of ∼6 × 10 2 is obtained when the Pt/TaO x /n-Si devices stay in a low resistance state, which originates from the existence of a Schottky barrier between the formed oxygen vacancy filament and the n-Si electrode. More importantly, numerical simulation reveals that the self-rectifying behavior itself can guarantee a maximum crossbar size of 212 × 212 (∼44 kbit) on the premise of 10% read margin. Moreover, satisfactory switching uniformity and retention performance are observed based on this simple tri-layer structure. All of these results demonstrate the great potential of this simple Pt/TaO x /n-Si tri-layer structure for access device-free high-density memory applications.