Cite
HARVARD Citation
Kumar, S. et al. (2017). Interface traps at Al2O3/InAlN/GaN MOS-HEMT -on- 200 mm Si. Solid-state electronics. pp. 117-122. [Online].
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Kumar, S. et al. (2017). Interface traps at Al2O3/InAlN/GaN MOS-HEMT -on- 200 mm Si. Solid-state electronics. pp. 117-122. [Online].