High-Resolution Radial Distribution Function of Pure Ion-Implanted Amorphous Silicon Measured Using Tilted-Illumination Selected-Area Electron Diffraction. (28th November 2013)

• Record Type: Journal Article
• Authors: Gorecki, Alexander; Liu, Amelia C.Y.; Petersen, Timothy C.
• Is Part Of: Microscopy and microanalysis. Volume 20:Number 1(2014:Feb.)
• Page Start: 50
• Page End: 54
• Publication Date: 2013-11-28
• Subjects: amorphous silicon, -- electron diffraction, -- radial distribution function, -- relaxation anneal; Microscopy -- Periodicals; Microchemistry -- Periodicals; 502.82
• DOI: 10.1017/S1431927613013779
• Languages: English
• ISSNs: 1431-9276

Abstract

Abstract: High-resolution radial distribution functions of as-implanted and thermally relaxed amorphous silicon created by ion implantation were measured using tilted-illumination selected area electron diffraction at room temperature. The diffracted intensities were measured out to a maximum scattering vector 2 sin(θ)/λ of 3.3–3.7 Å −1 . The volume-averaged pair-correlation statistics of as-implanted and relaxed ion-implanted amorphous silicon are virtually indistinguishable with coordination numbers of 3.7 ± 0.3 and 3.9 ± 0.3 (for neighbors closer than 3 Å) and average bond angles of 109 ± 0.5° and 110 ± 0.6°, respectively. The atomic rearrangements in ion-implanted amorphous silicon due to a low temperature anneal are subtle.