Atomic-Resolution Investigation of Irradiation-Induced Defects in Silicon Carbide. (August 2014)

Record Type:: Journal Article
Title:: Atomic-Resolution Investigation of Irradiation-Induced Defects in Silicon Carbide. (August 2014)
Main Title:: Atomic-Resolution Investigation of Irradiation-Induced Defects in Silicon Carbide
Authors:: Parish, Chad M.
Koyanagi, Takaaki
Kondo, Sosuke
Katoh, Yutai
Abstract:
Is Part Of:: Microscopy and microanalysis. Volume 20(2014)Supplement 3
Journal:: Microscopy and microanalysis
Issue:: Volume 20(2014)Supplement 3
Issue Display:: Volume 20, Issue 3 (2014)
Year:: 2014
Volume:: 20
Issue:: 3
Issue Sort Value:: 2014-0020-0003-0000
Page Start:: 1042
Page End:: 1043
Publication Date:: 2014-08
Subjects:: Microscopy -- Periodicals
Microchemistry -- Periodicals
502.82
Journal URLs:: https://academic.oup.com/mam ↗
http://journals.cambridge.org/action/displayJournal?jid=MAM ↗
http://link.springer.de/link/service/journals/10005/index.htm ↗
http://firstsearch.oclc.org ↗
DOI:: 10.1017/S143192761400693X ↗
Languages:: English
ISSNs:: 1431-9276
Deposit Type:: Legaldeposit
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗
Physical Locations:: British Library HMNTS - ELD Digital store
Ingest File:: 4817.xml