Si Doped Hafnium Oxide—A "Fragile" Ferroelectric System. (22nd August 2017)

• Record Type: Journal Article
• Authors: Richter, Claudia; Schenk, Tony; Park, Min Hyuk; Tscharntke, Franziska A.; Grimley, Everett D.; LeBeau, James M.; Zhou, Chuanzhen; Fancher, Chris M.; Jones, Jacob L.; Mikolajick, Thomas; Schroeder, Uwe
• Is Part Of: Advanced Electronic Materials. Volume 3:Number 10(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-08-22
• Subjects: ferroelectrics -- hafnium oxide -- Landau theory -- Rietveld analysis; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201700131
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: Silicon doped hafnium oxide was the material used in the original report of ferroelectricity in hafnia in 2011. Since then, it has been subject of many further publications including the demonstration of the world's first ferroelectric field‐effect transistor in the state‐of‐the‐art 28 nm technology. Though many studies are conducted with a strong focus on application in memory devices, a comprehensive study on structural stability in these films remains to be seen. In this work, a film thickness of about 36 nm, instead of the 10 nm used in most previous studies, is utilized to carefully probe how the concentration range impacts the evolution of phases, the dopant distribution, the field cycling effects, and their interplay in the macroscopic ferroelectric response of the films. Si:HfO2 appears to be a rather fragile system: different phases seem close in energy and the system is thus rich in competing phenomena. Nonetheless, it offers ferroelectricity or field‐induced ferroelectricity for elevated annealing conditions up to 1000 °C. Similar to the measures taken for conventional ferroelectrics such as lead zirconate titanate, engineering efforts to guarantee stable interfaces and stoichiometry are mandatory to achieve stable performance in applications such as ferroelectric memories, supercapacitors, or energy harvesting devices. Abstract : Silicon doped hafnium oxide is currently one of the most promising materials for future memory applications. This comprehensive study focuses on the interplay between structural and electrical properties to give a deeper understanding of this fragile system. Several phase transformation effects can be correlated with the Landau theory and the influence of internal bias fields.