Intrinsic magnetic field effects in organic semiconductors. (15th July 2014)

• Record Type: Journal Article
• Authors: Wohlgenannt, Markus; Bobbert, Peter A.; Koopmans, Bert
• Is Part Of: MRS bulletin. Volume 39:Number 7(2014:Jul.)
• Page Start: 590
• Page End: 595
• Publication Date: 2014-07-15
• Subjects: organic, -- semiconducting, -- spintronic, -- magnetoresistance (transport); Materials -- Periodicals; 620.11
• DOI: 10.1557/mrs.2014.132
• Languages: English
• ISSNs: 0883-7694

Abstract

Abstract: Abstract : The effects of a magnetic field on the current in sandwich devices of a nonmagnetic material in-between two ferromagnetic electrodes are well known. However, magnetic-field effects also occur in the responses of devices of organic semiconductors sandwiched in-between non-ferromagnetic electrodes, providing an entirely new route toward organic spintronics. The precise origins of these "intrinsic" magnetic field effects are still unclear. They appear to be related to spin-selective reactions between paramagnetic entities such as electrons, holes, and triplet excitons. We present an overview of these effects and discuss three recent developments that shed new light on them: (1) tuning of the effects in molecularly engineered systems, (2) the discovery of ultrahigh magnetoresistance in molecular wires, and (3) the discovery of "fringe-field" magnetoresistance.