ZnO:Al Thin Films by Successive Chemical Solution Deposition for Transistors Applications. Issue 1731 (15th May 2015)

• Record Type: Journal Article
• Authors: González, Luis A.; Ramírez, Sara E.; Pech-Canul, Martín I.
• Editors: Veal, T. D.; Bierwagen, O.; Higashiwaki, M.; Janotti, A.
• Is Part Of: MRS proceedings. Issue 1731:(2015)
• Publication Date: 2015-05-15
• Subjects: solution deposition, -- scanning electron microscopy (SEM), -- semiconducting; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2015.468
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: Here, we show results on the deposition of ZnO:Al thin films by the successive ionic layer adsorption and reaction method. The growing of the films was performed by sequentially immersing glass and SiO2 /Si substrates in water at temperatures close to the boiling point, a precursor reaction solution, water at room temperature and ultrasonic water bath. The resulting ZnO:Al films were transparent and well adhered to the substrates. From X-ray diffraction analysis was determined that the ZnO:Al films had hexagonal wurtzite structure with preferential orientation along the c-axis. Changes in the morphology of the films were obtained from ellipsoidal-shaped aggregates for the undoped ZnO films to spherical-shaped aggregates for the ZnO:Al films. The optical transparency and bandgap of the ZnO:Al films was about 85% and 3.28 eV, respectively. Thin film transistors were fabricated with ZnO:Al films as active layers. The characterized device had a saturation mobility of 0.048 cm 2 /V-s, threshold voltage of approximately 16.1 V and a drain current on-to-off ratio (Ion/Ioff) in the order of 10 3 .