A silicon‐based dual‐material double‐gate tunnel field‐effect transistor with optimized performance. (9th January 2017)

• Record Type: Journal Article
• Authors: Noor, Samantha Lubaba; Safa, Samia; Khan, Md. Ziaur Rahman
• Is Part Of: International journal of numerical modelling. Volume 30:Number 6(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-01-09
• Subjects: dual‐material double‐gate tunnel FET -- optimization -- subthreshold swing -- TCAD simulation -- tunneling current; Electric networks -- Mathematical models -- Periodicals; Electronics -- Mathematical models -- Periodicals; 621.3011
• DOI: 10.1002/jnm.2220
• Languages: English
• ISSNs: 0894-3370

Abstract

Abstract: The work focuses on optimizing the device parameters of a Si‐based dual‐material double‐gate tunnel field‐effect transistor for maximizing its efficiency. The efficiency is measured in terms of drain current, subthreshold swing, I O N / I O F F ratio, and electron concentration in Si body. A numerical model of dual‐material double‐gate tunnel field‐effect transistor is developed using Silvaco, Atlas. Simulations are performed in Technology Computer Aided Design (TCAD) using Kane's band‐to‐band tunneling model. Based on the simulation results, optimum values of gate workfunctions, doping levels in different regions, ratio of gate lengths, and Si body thickness are suggested for the device. The proposed optimized device shows subthreshold swing of 15 − 41mV/dec, on current of 1.4 × 10 − 4 A/μm and I O N / I O F F ratio on the order of 10 12 .